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单MOSFET晶体管 / APT56F60L
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- 型号: APT56F60L
- 厂商: Microchip Technology
- 类别: 单MOSFET晶体管
- 封装: TO-264-3
- 描述: MOSFET FG, FREDFET, 600V, TO-264View in Development Tools Selector
- 库存地点: 内地
- 库存: 28
- 货期: 1 - 3 个工作日
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包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- 生命周期状态:Production (Last Updated: 2 months ago)
- 包装/外壳:TO-264-3
- 安装类型:通孔
- 底架:通孔
- 供应商器件包装:TO-264 [L]
- RoHS:Details
- Mounting Styles:通孔
- Transistor Polarity:N-Channel
- Vds - Drain-Source Breakdown Voltage:600 V
- Id - Continuous Drain Current:60 A
- Rds On - Drain-Source Resistance:110 mOhms
- Vgs - Gate-Source Voltage:- 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage:4 V
- Qg - Gate Charge:280 nC
- Minimum Operating Temperature:- 55 C
- Maximum Operating Temperature:+ 150 C
- Pd - Power Dissipation:1.04 kW
- Channel Mode:Enhancement
- Forward Transconductance - Min:55 S
- Factory Pack QuantityFactory Pack Quantity:1
- Typical Turn-Off Delay Time:190 ns
- Typical Turn-On Delay Time:65 ns
- Unit Weight:0.352740 oz
- Package:Tube
- Base Product Number:APT56F60
- Current - Continuous Drain (Id) @ 25℃:60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- 厂商:微芯片技术
- Power Dissipation (Max):1040W (Tc)
- Product Status:活跃
- Number of Elements:1
- Turn Off Delay Time:190 ns
- 包装:Tube
- 操作温度:-55°C ~ 150°C (TJ)
- 系列:POWER MOS 8™
- 最高工作温度:150 °C
- 最小工作温度:-55 °C
- 最大功率耗散:1.04 kW
- 配置:Single
- 通道数量:1 Channel
- 功率耗散:1.04 kW
- 接通延迟时间:65 ns
- 场效应管类型:N-Channel
- Rds On(Max)@Id,Vgs:110mOhm @ 28A, 10V
- 不同 Id 时 Vgs(th)(最大值):5V @ 2.5mA
- 输入电容(Ciss)(Max)@Vds:11300 pF @ 25 V
- 门极电荷(Qg)(最大)@Vgs:280 nC @ 10 V
- 上升时间:75 ns
- 漏源电压 (Vdss):600 V
- Vgs(最大值):±30V
- 连续放电电流(ID):60 A
- 栅极至源极电压(Vgs):30 V
- 输入电容:11.3 nF
- 场效应管特性:-
- 最大rds:110 mΩ
- 辐射硬化:无
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