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单MOSFET晶体管 / BSS138-G
- 价格 起订量
- ¥ 1.41446 1+
- ¥ 1.33440 10+
- ¥ 1.25886 100+
- ¥ 1.18761 500+
- ¥ 1.12038 1000+
- 型号: BSS138-G
- 厂商: onsemi(安森美)
- 类别: 单MOSFET晶体管
- 封装: SOT-23-3
- 描述: MOSFET FET 50V 3.5 OHM
- 库存地点: 内地
- 库存: 483
- 货期: 1 - 3 个工作日
个
总额¥ 1.41446
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包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- 包装/外壳:SOT-23-3
- 安装类型:表面贴装
- 表面安装:YES
- 供应商器件包装:SOT-23-3 (TO-236)
- 终端数量:3
- 晶体管元件材料:SILICON
- RoHS:Details
- Mounting Styles:SMD/SMT
- Transistor Polarity:N-Channel
- Vds - Drain-Source Breakdown Voltage:50 V
- Id - Continuous Drain Current:220 mA
- Rds On - Drain-Source Resistance:3.5 Ohms
- Vgs - Gate-Source Voltage:- 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:1.5 V
- Qg - Gate Charge:1.7 nC
- Minimum Operating Temperature:- 50 C
- Maximum Operating Temperature:+ 150 C
- Pd - Power Dissipation:350 mW
- Channel Mode:Enhancement
- Forward Transconductance - Min:0.12 S
- Factory Pack QuantityFactory Pack Quantity:3000
- Typical Turn-Off Delay Time:20 ns
- Typical Turn-On Delay Time:2.5 ns
- Unit Weight:0.000282 oz
- Continuous Drain Current Id:220
- Package:Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
- Base Product Number:BSS138
- Current - Continuous Drain (Id) @ 25℃:220mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- 厂商:onsemi
- Power Dissipation (Max):360mW (Ta)
- Product Status:活跃
- Package Description:SMALL OUTLINE, R-PDSO-G3
- Package Style:小概要
- Package Body Material:PLASTIC/EPOXY
- Reflow Temperature-Max (s):未说明
- Rohs Code:有
- Manufacturer Part Number:BSS138-G
- Package Shape:RECTANGULAR
- Number of Elements:1
- Part Life Cycle Code:活跃
- Ihs Manufacturer:COMCHIP TECHNOLOGY CO LTD
- Risk Rank:5.48
- Drain Current-Max (ID):0.22 A
- 包装:MouseReel
- 操作温度:-55°C ~ 150°C (TJ)
- 系列:-
- 端子位置:DUAL
- 终端形式:鸥翼
- 峰值回流焊温度(摄氏度):未说明
- Reach合规守则:compliant
- JESD-30代码:R-PDSO-G3
- 配置:Single
- 通道数量:1 Channel
- 操作模式:增强型MOSFET
- 功率耗散:360
- 场效应管类型:N-Channel
- Rds On(Max)@Id,Vgs:3.5Ohm @ 220mA, 10V
- 不同 Id 时 Vgs(th)(最大值):1.5V @ 1mA
- 输入电容(Ciss)(Max)@Vds:27 pF @ 25 V
- 门极电荷(Qg)(最大)@Vgs:2.4 nC @ 10 V
- 上升时间:9 ns
- 漏源电压 (Vdss):50 V
- Vgs(最大值):±20V
- 极性/通道类型:N-CHANNEL
- 晶体管类型:1 N-Channel
- 漏极-源极导通最大电阻:6 Ω
- DS 击穿电压-最小值:50 V
- 信道型:N
- 场效应管技术:METAL-OXIDE SEMICONDUCTOR
- 场效应管特性:-
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