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单MOSFET晶体管 / SCT040H65G3AG
- 价格 起订量
- ¥ 65.40614 1+
- ¥ 61.70391 10+
- ¥ 58.21123 100+
- ¥ 54.91626 500+
- ¥ 51.80779 1000+
- 型号: SCT040H65G3AG
- 厂商: TIH Microelectronics(方寸微)
- 类别: 单MOSFET晶体管
- 封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
- 描述: AUTOMOTIVE-GRADE SILICON CARBIDE
- 库存地点: 内地
- 库存: 100000
- 货期: 1 - 3 个工作日
个
总额¥ 65.40614
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包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- 安装类型:表面贴装
- 包装/外壳:TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
- 供应商器件包装:H2PAK-7
- 厂商:STMicroelectronics
- Product Status:活跃
- Current - Continuous Drain (Id) @ 25℃:30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):15V, 18V
- Power Dissipation (Max):221W (Tc)
- Package Type:H2PAK-7
- Vds - Drain-Source Breakdown Voltage:650 V
- Vgs th - Gate-Source Threshold Voltage:4.2 V
- Qualification:AEC-Q101
- Pd - Power Dissipation:221 W
- Transistor Polarity:N-Channel
- Maximum Operating Temperature:+ 175 C
- Vgs - Gate-Source Voltage:- 10 V, + 22 V
- Minimum Operating Temperature:- 55 C
- Factory Pack QuantityFactory Pack Quantity:1000
- Mounting Styles:SMD/SMT
- Channel Mode:Enhancement
- Manufacturer:STMicroelectronics
- Brand:STMicroelectronics
- Qg - Gate Charge:39.5 nC
- Rds On - Drain-Source Resistance:40 mOhms
- RoHS:Details
- Id - Continuous Drain Current:30 A
- 系列:Automotive, AEC-Q101
- 操作温度:-55°C ~ 175°C (TJ)
- 包装:MouseReel
- 子类别:MOSFETs
- 引脚数量:7
- 通道数量:1 Channel
- 场效应管类型:N-Channel
- Rds On(Max)@Id,Vgs:55mOhm @ 20A, 18V
- 不同 Id 时 Vgs(th)(最大值):4.2V @ 1mA
- 输入电容(Ciss)(Max)@Vds:920 pF @ 400 V
- 门极电荷(Qg)(最大)@Vgs:39.5 nC @ 18 V
- 漏源电压 (Vdss):650 V
- Vgs(最大值):+18V, -5V
- 产品类别:MOSFET
- 信道型:N
- 场效应管特性:-
- 产品:MOSFET
- 产品类别:MOSFET
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