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单MOSFET晶体管 / 2SK2225-80-E#T2

  • 价格 起订量
  • ¥ 120.45636 1+
  • ¥ 113.63807 10+
  • ¥ 107.20573 100+
  • ¥ 101.13748 500+
  • ¥ 95.41272 1000+
  • 型号: 2SK2225-80-E#T2
  • 厂商: Renesas Electronics America Inc
  • 类别: 单MOSFET晶体管
  • 封装: TO-220-3 Full Pack
  • 描述: ABU / MOSFET
  • 库存地点: 内地
  • 库存: 5000
  • 货期: 1 - 3 个工作日
  个
总额¥ 120.45636

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包装流程

  • 1.产品检查
  • 2.塑料封装
  • 3.防静电保护
  • 4.包装入箱
  • 5.贴条形码
  • 6.出库运输
产品属性 产品问答
  • 属性参考值
  • 安装类型:通孔
  • 包装/外壳:TO-220-3 Full Pack
  • 表面安装:NO
  • 供应商器件包装:TO-3PFM
  • 终端数量:3
  • 晶体管元件材料:SILICON
  • 厂商:Renesas Electronics America Inc
  • Product Status:活跃
  • Current - Continuous Drain (Id) @ 25℃:2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):15V
  • Power Dissipation (Max):50W (Tc)
  • Continuous Drain Current Id:2
  • MSL:MSL 1 - Unlimited
  • Qualification:-
  • Vds - Drain-Source Breakdown Voltage:1.5 kV
  • Typical Turn-On Delay Time:17 ns
  • Vgs th - Gate-Source Threshold Voltage:4 V
  • Pd - Power Dissipation:50 W
  • Transistor Polarity:N-Channel
  • Maximum Operating Temperature:+ 150 C
  • Vgs - Gate-Source Voltage:- 20 V, + 20 V
  • Factory Pack QuantityFactory Pack Quantity:25
  • Mounting Styles:通孔
  • Forward Transconductance - Min:0.45 S
  • Channel Mode:Enhancement
  • Manufacturer:Renesas Electronics
  • Brand:Renesas Electronics
  • Rds On - Drain-Source Resistance:12 Ohms
  • RoHS:Details
  • Typical Turn-Off Delay Time:150 ns
  • Id - Continuous Drain Current:2 A
  • Package Description:FLANGE MOUNT, R-PSFM-T3
  • Package Style:FLANGE MOUNT
  • Package Body Material:PLASTIC/EPOXY
  • Manufacturer Package Code:PRSS0003ZD-A3
  • Reflow Temperature-Max (s):未说明
  • Manufacturer Part Number:2SK2225-80-E#T2
  • Package Shape:RECTANGULAR
  • Number of Elements:1
  • Part Life Cycle Code:活跃
  • Samacsys Description:General Purpose Power MOSFETs Nch Single Power MOSFET 1500V 2A 12000mohm TO-3PF
  • Ihs Manufacturer:RENESAS ELECTRONICS CORP
  • Risk Rank:5.74
  • Part Package Code:TO-3PF
  • Drain Current-Max (ID):2 A
  • 操作温度:150°C
  • 包装:Tube
  • 子类别:MOSFETs
  • 端子位置:SINGLE
  • 终端形式:THROUGH-HOLE
  • 峰值回流焊温度(摄氏度):未说明
  • Reach合规守则:compliant
  • 引脚数量:3
  • JESD-30代码:R-PSFM-T3
  • Brand Name:Renesas
  • 配置:SINGLE WITH BUILT-IN DIODE
  • 通道数量:1 Channel
  • 操作模式:增强型MOSFET
  • 功率耗散:50
  • 箱体转运:ISOLATED
  • 场效应管类型:N-Channel
  • 晶体管应用:SWITCHING
  • Rds On(Max)@Id,Vgs:12Ohm @ 1A, 15V
  • 不同 Id 时 Vgs(th)(最大值):4V @ 1mA
  • 输入电容(Ciss)(Max)@Vds:990 pF @ 10 V
  • 上升时间:50 ns
  • 漏源电压 (Vdss):1500 V
  • Vgs(最大值):±20V
  • 极性/通道类型:N-CHANNEL
  • 产品类别:MOSFET
  • 晶体管类型:1 N-Channel
  • 漏极-源极导通最大电阻:12 Ω
  • 脉冲漏极电流-最大值(IDM):7 A
  • DS 击穿电压-最小值:1500 V
  • 信道型:N
  • 场效应管技术:METAL-OXIDE SEMICONDUCTOR
  • 场效应管特性:-
  • 产品类别:MOSFET
  • 宽度:15.5 mm
  • 高度:5.5 mm
  • 长度:26.5 mm

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