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单MOSFET晶体管 / 2SK2225-80-E#T2
- 价格 起订量
- ¥ 120.45636 1+
- ¥ 113.63807 10+
- ¥ 107.20573 100+
- ¥ 101.13748 500+
- ¥ 95.41272 1000+
- 型号: 2SK2225-80-E#T2
- 厂商: Renesas Electronics America Inc
- 类别: 单MOSFET晶体管
- 封装: TO-220-3 Full Pack
- 描述: ABU / MOSFET
- 库存地点: 内地
- 库存: 5000
- 货期: 1 - 3 个工作日
个
总额¥ 120.45636
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包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- 安装类型:通孔
- 包装/外壳:TO-220-3 Full Pack
- 表面安装:NO
- 供应商器件包装:TO-3PFM
- 终端数量:3
- 晶体管元件材料:SILICON
- 厂商:Renesas Electronics America Inc
- Product Status:活跃
- Current - Continuous Drain (Id) @ 25℃:2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):15V
- Power Dissipation (Max):50W (Tc)
- Continuous Drain Current Id:2
- MSL:MSL 1 - Unlimited
- Qualification:-
- Vds - Drain-Source Breakdown Voltage:1.5 kV
- Typical Turn-On Delay Time:17 ns
- Vgs th - Gate-Source Threshold Voltage:4 V
- Pd - Power Dissipation:50 W
- Transistor Polarity:N-Channel
- Maximum Operating Temperature:+ 150 C
- Vgs - Gate-Source Voltage:- 20 V, + 20 V
- Factory Pack QuantityFactory Pack Quantity:25
- Mounting Styles:通孔
- Forward Transconductance - Min:0.45 S
- Channel Mode:Enhancement
- Manufacturer:Renesas Electronics
- Brand:Renesas Electronics
- Rds On - Drain-Source Resistance:12 Ohms
- RoHS:Details
- Typical Turn-Off Delay Time:150 ns
- Id - Continuous Drain Current:2 A
- Package Description:FLANGE MOUNT, R-PSFM-T3
- Package Style:FLANGE MOUNT
- Package Body Material:PLASTIC/EPOXY
- Manufacturer Package Code:PRSS0003ZD-A3
- Reflow Temperature-Max (s):未说明
- Manufacturer Part Number:2SK2225-80-E#T2
- Package Shape:RECTANGULAR
- Number of Elements:1
- Part Life Cycle Code:活跃
- Samacsys Description:General Purpose Power MOSFETs Nch Single Power MOSFET 1500V 2A 12000mohm TO-3PF
- Ihs Manufacturer:RENESAS ELECTRONICS CORP
- Risk Rank:5.74
- Part Package Code:TO-3PF
- Drain Current-Max (ID):2 A
- 操作温度:150°C
- 包装:Tube
- 子类别:MOSFETs
- 端子位置:SINGLE
- 终端形式:THROUGH-HOLE
- 峰值回流焊温度(摄氏度):未说明
- Reach合规守则:compliant
- 引脚数量:3
- JESD-30代码:R-PSFM-T3
- Brand Name:Renesas
- 配置:SINGLE WITH BUILT-IN DIODE
- 通道数量:1 Channel
- 操作模式:增强型MOSFET
- 功率耗散:50
- 箱体转运:ISOLATED
- 场效应管类型:N-Channel
- 晶体管应用:SWITCHING
- Rds On(Max)@Id,Vgs:12Ohm @ 1A, 15V
- 不同 Id 时 Vgs(th)(最大值):4V @ 1mA
- 输入电容(Ciss)(Max)@Vds:990 pF @ 10 V
- 上升时间:50 ns
- 漏源电压 (Vdss):1500 V
- Vgs(最大值):±20V
- 极性/通道类型:N-CHANNEL
- 产品类别:MOSFET
- 晶体管类型:1 N-Channel
- 漏极-源极导通最大电阻:12 Ω
- 脉冲漏极电流-最大值(IDM):7 A
- DS 击穿电压-最小值:1500 V
- 信道型:N
- 场效应管技术:METAL-OXIDE SEMICONDUCTOR
- 场效应管特性:-
- 产品类别:MOSFET
- 宽度:15.5 mm
- 高度:5.5 mm
- 长度:26.5 mm
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