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单MOSFET晶体管 / MC3541-TP
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- ¥ 0 10+
- ¥ 0 100+
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- ¥ 0 1000+
- 型号: MC3541-TP
- 厂商: Micro Commercial Components (MCC)
- 类别: 单MOSFET晶体管
- 封装: SOT-723-3
- 描述: MOSFET N-Ch FET 30Vds 20Vgs 100mA 150mW 9pF
- 库存地点: 内地
- 库存: 126688
- 货期: 1 - 3 个工作日
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包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- 包装/外壳:SOT-723-3
- 安装类型:表面贴装
- 表面安装:YES
- 供应商器件包装:SOT-723
- 终端数量:3
- 晶体管元件材料:SILICON
- RoHS:Details
- Mounting Styles:SMD/SMT
- Transistor Polarity:N-Channel
- Vds - Drain-Source Breakdown Voltage:30 V
- Id - Continuous Drain Current:100 mA
- Rds On - Drain-Source Resistance:8 Ohms
- Vgs - Gate-Source Voltage:- 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:800 mV
- Minimum Operating Temperature:- 55 C
- Maximum Operating Temperature:+ 150 C
- Pd - Power Dissipation:150 mW
- Fall Time:80 ns
- Forward Transconductance - Min:20 mS
- Factory Pack QuantityFactory Pack Quantity:8000
- Typical Turn-Off Delay Time:80 ns
- Typical Turn-On Delay Time:15 ns
- Unit Weight:0.000053 oz
- Package:Bulk
- Base Product Number:MC3541
- Current - Continuous Drain (Id) @ 25℃:100mA
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
- 厂商:Micro Commercial Co
- Power Dissipation (Max):150mW
- Product Status:活跃
- Package Description:SMALL OUTLINE, R-PDSO-F3
- Package Style:小概要
- Package Body Material:PLASTIC/EPOXY
- Operating Temperature-Min:-55 °C
- Operating Temperature-Max:150 °C
- Rohs Code:有
- Manufacturer Part Number:MC3541-TP
- Package Shape:RECTANGULAR
- Number of Elements:1
- Part Life Cycle Code:活跃
- Ihs Manufacturer:MICRO COMMERCIAL COMPONENTS
- Risk Rank:5.7
- Drain Current-Max (ID):0.1 A
- 系列:N-Ch Polarity
- 包装:Reel
- 操作温度:-55°C ~ 150°C
- ECCN 代码:EAR99
- 端子位置:DUAL
- 终端形式:FLAT
- Reach合规守则:compliant
- JESD-30代码:R-PDSO-F3
- 配置:Single
- 通道数量:1 Channel
- 操作模式:增强型MOSFET
- 场效应管类型:N-Channel
- 晶体管应用:SWITCHING
- Rds On(Max)@Id,Vgs:8Ohm @ 10mA, 4V
- 不同 Id 时 Vgs(th)(最大值):1.5V @ 100µA
- 输入电容(Ciss)(Max)@Vds:13 pF @ 5 V
- 上升时间:35 ns
- 漏源电压 (Vdss):30 V
- Vgs(最大值):±20V
- 极性/通道类型:N-CHANNEL
- 晶体管类型:1 N- Channel
- 漏极-源极导通最大电阻:8 Ω
- DS 击穿电压-最小值:30 V
- 场效应管技术:METAL-OXIDE SEMICONDUCTOR
- 最大耗散功率(Abs):0.15 W
- 场效应管特性:-
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