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单MOSFET晶体管 / TPW3R70APL,L1Q
- 价格 起订量
- ¥ 0 1+
- ¥ 0 10+
- ¥ 0 100+
- ¥ 0 500+
- ¥ 0 1000+
- 型号: TPW3R70APL,L1Q
- 厂商: Toshiba Semiconductor and Storage
- 类别: 单MOSFET晶体管
- 封装: 8-PowerWDFN
- 描述: PB-F POWER MOSFET TRANSISTOR DSO
- 库存地点: 内地
- 库存: 26
- 货期: 1 - 3 个工作日
个
总额¥ 0.00000
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包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- 安装类型:表面贴装
- 包装/外壳:8-PowerWDFN
- 供应商器件包装:8-DSOP Advance
- 厂商:东芝半导体与存储
- Package:Tape & Reel (TR)
- Product Status:活跃
- Current - Continuous Drain (Id) @ 25℃:90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Power Dissipation (Max):960mW (Ta), 170W (Tc)
- Vds - Drain-Source Breakdown Voltage:100 V
- Typical Turn-On Delay Time:21 ns
- Vgs th - Gate-Source Threshold Voltage:1.5 V
- Pd - Power Dissipation:170 W
- Transistor Polarity:N-Channel
- Maximum Operating Temperature:+ 175 C
- Vgs - Gate-Source Voltage:- 20 V, + 20 V
- Unit Weight:0.003668 oz
- Minimum Operating Temperature:- 55 C
- Factory Pack QuantityFactory Pack Quantity:5000
- Mounting Styles:SMD/SMT
- Channel Mode:Enhancement
- Manufacturer:Toshiba
- Brand:Toshiba
- Qg - Gate Charge:67 nC
- Tradename:U-MOSIX-H
- Rds On - Drain-Source Resistance:3.7 mOhms
- RoHS:Details
- Typical Turn-Off Delay Time:68 ns
- Id - Continuous Drain Current:150 A
- 系列:U-MOSIX-H
- 操作温度:175°C
- 包装:MouseReel
- 子类别:MOSFETs
- 配置:Single
- 通道数量:1 Channel
- 场效应管类型:N-Channel
- Rds On(Max)@Id,Vgs:3.7mOhm @ 45A, 10V
- 不同 Id 时 Vgs(th)(最大值):2.5V @ 1mA
- 输入电容(Ciss)(Max)@Vds:6300 pF @ 50 V
- 门极电荷(Qg)(最大)@Vgs:67 nC @ 10 V
- 上升时间:10 ns
- 漏源电压 (Vdss):100 V
- Vgs(最大值):±20V
- 产品类别:MOSFET
- 晶体管类型:1 N-Channel
- 场效应管特性:-
- 产品类别:MOSFET
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