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MOSFETs 晶体管阵列 / PMCPB5530X,115
- 价格 起订量
- ¥ 0 1+
- ¥ 0 10+
- ¥ 0 100+
- ¥ 0 500+
- ¥ 0 1000+
- 型号: PMCPB5530X,115
- 厂商: Freescale Semiconductor, Inc. (NXP Semiconductors)
- 类别: MOSFETs 晶体管阵列
- 封装:
- 描述:
- 库存地点: 内地
- 库存: 暂无库存
- 货期: 1 - 3 个工作日
个
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包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- Maximum Gate Threshold Voltage (V):0.9
- Maximum Continuous Drain Current (A):4
- Maximum Gate Source Leakage Current (nA):100
- Maximum IDSS (uA):1
- Maximum Drain Source Resistance (MOhm):34@4.5V@N Channel|70@4.5V@P Channel
- Typical Gate Charge @ Vgs (nC):14.4@4.5V@N Channel|8.1@5V@P Channel
- Typical Input Capacitance @ Vds (pF):660@10V@N Channel|785@10V@P Channel
- Maximum Gate Source Voltage (V):12
- Maximum Drain Source Voltage (V):20
- Number of Elements per Chip:2
- Channel Mode:Enhancement
- Process Technology:TMOS
- Category:小信号
- PPAP:Unknown
- Automotive:Unknown
- SVHC:有
- HTS:8541.29.00.95
- ECCN (US):EAR99
- EU RoHS:Compliant
- Maximum Power Dissipation (mW):1170
- Typical Fall Time (ns):16
- Typical Rise Time (ns):15@N Channel|14@P Channel
- Typical Turn-Off Delay Time (ns):40
- Typical Turn-On Delay Time (ns):4
- Minimum Operating Temperature (°C):-55
- Maximum Operating Temperature (°C):150
- Mounting:表面贴装
- Package Height:0.61(Max)
- Package Width:2.1(Max)
- Package Length:2.1(Max)
- PCB changed:6
- Supplier Package:HUSON EP
- 包装:卷带
- 零件状态:活跃
- 引脚数量:6
- 配置:Dual
- 信道型:N|P
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