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MOSFETs 晶体管阵列 / IXTT96N20P-TRL
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- ¥ 0 10+
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- 型号: IXTT96N20P-TRL
- 厂商: Littelfuse(美国力特)
- 类别: MOSFETs 晶体管阵列
- 封装: TO-268-3
- 描述:
- 库存地点: 内地
- 库存: 33
- 货期: 1 - 3 个工作日
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包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- 包装/外壳:TO-268-3
- EU RoHS:Compliant
- ECCN (US):EAR99
- Automotive:无
- PPAP:无
- Category:功率MOSFET
- Process Technology:PolarHT
- Channel Mode:Enhancement
- Number of Elements per Chip:1
- Maximum Drain Source Voltage (V):200
- Maximum Gate Source Voltage (V):±20
- Maximum Continuous Drain Current (A):96
- Maximum Drain Source Resistance (MOhm):24@10V
- Typical Gate Charge @ Vgs (nC):145@10V
- Typical Gate Charge @ 10V (nC):145
- Typical Input Capacitance @ Vds (pF):4800@25V
- Maximum Power Dissipation (mW):600000
- Typical Fall Time (ns):30
- Typical Rise Time (ns):30
- Typical Turn-Off Delay Time (ns):75
- Typical Turn-On Delay Time (ns):28
- Minimum Operating Temperature (°C):-55
- Maximum Operating Temperature (°C):175
- Mounting:表面贴装
- Package Height:5.1(Max)
- Package Width:14(Max)
- Package Length:16.05(Max)
- PCB changed:2
- Tab:Tab
- Supplier Package:TO-268
- Typical Turn-On Delay Time:28 ns
- Pd - Power Dissipation:600 W
- Maximum Operating Temperature:+ 175 C
- Vgs - Gate-Source Voltage:20 V
- Minimum Operating Temperature:- 55 C
- Mounting Styles:SMD/SMT
- Rds On - Drain-Source Resistance:24 mOhms
- Typical Turn-Off Delay Time:75 ns
- 包装:卷带
- 零件状态:活跃
- 类型:PolarHT
- 子类别:Discrete Semiconductor Modules
- 技术:Si
- 引脚数量:3
- 配置:Single
- 上升时间:30 ns
- 产品类别:Discrete Semiconductor Modules
- 信道型:N
- 产品:功率MOSFET模块
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