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单MOSFET晶体管 / APT53N60BC6
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- 型号: APT53N60BC6
- 厂商: Microchip Technology
- 类别: 单MOSFET晶体管
- 封装: TO-247-3
- 描述: MOSFET FG, MOSFET, 600V, 53A, TO-247View in Development Tools Selector
- 库存地点: 内地
- 库存: 9000
- 货期: 1 - 3 个工作日
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包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- 包装/外壳:TO-247-3
- 安装类型:通孔
- 供应商器件包装:TO-247 [B]
- RoHS:Details
- Mounting Styles:通孔
- Transistor Polarity:N-Channel
- Vds - Drain-Source Breakdown Voltage:600 V
- Id - Continuous Drain Current:53 A
- Rds On - Drain-Source Resistance:70 mOhms
- Vgs - Gate-Source Voltage:- 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:3 V
- Qg - Gate Charge:154 nC
- Minimum Operating Temperature:- 55 C
- Maximum Operating Temperature:+ 150 C
- Pd - Power Dissipation:417 W
- Channel Mode:Enhancement
- Forward Transconductance - Min:-
- Factory Pack QuantityFactory Pack Quantity:1
- Typical Turn-Off Delay Time:151 ns
- Typical Turn-On Delay Time:14 ns
- Unit Weight:0.211644 oz
- Continuous Drain Current Id:53
- Package:Tube
- Base Product Number:APT53N60
- Current - Continuous Drain (Id) @ 25℃:53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- 厂商:微芯片技术
- Power Dissipation (Max):417W (Tc)
- Product Status:活跃
- 包装:Tube
- 操作温度:-55°C ~ 150°C (TJ)
- 系列:CoolMOS™
- 配置:Single
- 功率耗散:417
- 场效应管类型:N-Channel
- Rds On(Max)@Id,Vgs:70mOhm @ 25.8A, 10V
- 不同 Id 时 Vgs(th)(最大值):3.5V @ 1.72mA
- 输入电容(Ciss)(Max)@Vds:4020 pF @ 25 V
- 门极电荷(Qg)(最大)@Vgs:154 nC @ 10 V
- 上升时间:36 ns
- 漏源电压 (Vdss):600 V
- Vgs(最大值):±20V
- 信道型:N
- 场效应管特性:-
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