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单MOSFET晶体管 / PJQ5425_R2_00001
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- 型号: PJQ5425_R2_00001
- 厂商: Panjit
- 类别: 单MOSFET晶体管
- 封装: 8-PowerVDFN
- 描述: MOSFET 30V P-Channel Enhancement Mode MOSFET
- 库存地点: 内地
- 库存: 49
- 货期: 1 - 3 个工作日
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包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- 安装类型:表面贴装
- 包装/外壳:8-PowerVDFN
- 供应商器件包装:DFN5060-8
- Qualification:AEC-Q200
- Voltage, Rating:150 V
- Case Code - in:2010
- Case Code - mm:5025
- Maximum Operating Temperature:+ 125 C
- Unit Weight:0.001199 oz
- Minimum Operating Temperature:- 55 C
- Factory Pack QuantityFactory Pack Quantity:4000
- Mounting Styles:PCB 安装
- Manufacturer:TT Electronics
- Brand:Welwyn Components / TT Electronics
- RoHS:Details
- Vds - Drain-Source Breakdown Voltage:30 V
- Moisture Sensitive:有
- Vgs th - Gate-Source Threshold Voltage:2.5 V
- Vgs - Gate-Source Voltage:- 20 V, + 20 V
- Qg - Gate Charge:107 nC
- Rds On - Drain-Source Resistance:4.5 mOhms
- Id - Continuous Drain Current:90 A
- Package:Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
- Current - Continuous Drain (Id) @ 25℃:15.8A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- 厂商:Panjit International Inc.
- Power Dissipation (Max):2W (Ta), 60W (Tc)
- Product Status:活跃
- 系列:PCF
- 包装:Reel
- 操作温度:-55°C ~ 150°C (TJ)
- 容差:0.1 %
- 温度系数:25 PPM / C
- 电阻:21.5 Ohms
- 子类别:Resistors
- 额定功率:330 mW (1/3 W)
- 技术:Thin Film
- 场效应管类型:P-Channel
- Rds On(Max)@Id,Vgs:4.5mOhm @ 20A, 10V
- 不同 Id 时 Vgs(th)(最大值):2.5V @ 250µA
- 输入电容(Ciss)(Max)@Vds:6067 pF @ 25 V
- 门极电荷(Qg)(最大)@Vgs:107 nC @ 10 V
- 漏源电压 (Vdss):30 V
- Vgs(最大值):±20V
- 产品类别:薄膜电阻器
- 场效应管特性:-
- 特征:-
- 产品类别:Thin Film Resistors - SMD
- 宽度:2.4 mm
- 高度:0.65 mm
- 长度:4.9 mm
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