图片经供参考,以实物为准

MOSFETs 晶体管阵列 / IRHF7110
- 价格 起订量
- ¥ 0 1+
- ¥ 0 10+
- ¥ 0 100+
- ¥ 0 500+
- ¥ 0 1000+
- 型号: IRHF7110
- 厂商: Infineon(英飞凌)
- 类别: MOSFETs 晶体管阵列
- 封装:
- 描述:
- 库存地点: 内地
- 库存: 暂无库存
- 货期: 1 - 3 个工作日
个
总额¥ 0.00000
付款方式
支付宝
微信支付
银联支付
银行支付
包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- 表面安装:NO
- 终端数量:3
- 晶体管元件材料:SILICON
- EU RoHS:不合规
- ECCN (US):出口接触方式
- HTS:8541.29.00.95
- Automotive:无
- PPAP:无
- Category:功率MOSFET
- Channel Mode:Enhancement
- Number of Elements per Chip:1
- Maximum Drain Source Voltage (V):100
- Maximum Gate Source Voltage (V):±20
- Maximum Continuous Drain Current (A):3.5
- Maximum Drain Source Resistance (MOhm):690@12V
- Typical Gate Charge @ Vgs (nC):11(Max)@12V
- Typical Input Capacitance @ Vds (pF):290@25V
- Maximum Power Dissipation (mW):15000
- Typical Fall Time (ns):40(Max)
- Typical Rise Time (ns):25(Max)
- Typical Turn-Off Delay Time (ns):40(Max)
- Typical Turn-On Delay Time (ns):20(Max)
- Minimum Operating Temperature (°C):-55
- Maximum Operating Temperature (°C):150
- Mounting:通孔
- Package Height:4.54(Max)
- PCB changed:3
- Standard Package Name:TO-205-AF
- Supplier Package:TO-39
- Lead Shape:通孔
- Package Description:CYLINDRICAL, O-MBCY-W3
- Package Style:CYLINDRICAL
- Package Body Material:METAL
- Reflow Temperature-Max (s):未说明
- Operating Temperature-Max:150 °C
- Rohs Code:无
- Manufacturer Part Number:IRHF7110
- Turn-on Time-Max (ton):45 ns
- Package Shape:ROUND
- Manufacturer:International Rectifier
- Number of Elements:1
- Part Life Cycle Code:Transferred
- Ihs Manufacturer:INTERNATIONAL RECTIFIER CORP
- Turn-off Time-Max (toff):80 ns
- Risk Rank:7.77
- Part Package Code:BCY
- Drain Current-Max (ID):3.5 A
- JESD-609代码:e0
- 无铅代码:无
- 零件状态:活跃
- ECCN 代码:EAR99
- 端子表面处理:Tin/Lead (Sn/Pb)
- 附加功能:辐射硬化
- 子类别:FET 通用电源
- 端子位置:BOTTOM
- 终端形式:WIRE
- 峰值回流焊温度(摄氏度):未说明
- Reach合规守则:compliant
- 引脚数量:3
- JESD-30代码:O-MBCY-W3
- 资历状况:不合格
- 配置:Single
- 操作模式:增强型MOSFET
- 晶体管应用:SWITCHING
- 极性/通道类型:N-CHANNEL
- JEDEC-95代码:TO-205AF
- 最大漏极电流 (Abs) (ID):3.5 A
- 漏极-源极导通最大电阻:0.69 Ω
- 脉冲漏极电流-最大值(IDM):14 A
- DS 击穿电压-最小值:100 V
- 信道型:N
- 雪崩能量等级(Eas):68 mJ
- 场效应管技术:METAL-OXIDE SEMICONDUCTOR
- 最大耗散功率(Abs):15 W
- 环境耗散-最大值:15 W
- 直径:9.22(Max)
相关产品

