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存储器 / IS34MW02G084-BLI
- 价格 起订量
- ¥ 29.85823 1+
- ¥ 28.16814 10+
- ¥ 26.57372 100+
- ¥ 25.06955 500+
- ¥ 23.65051 1000+
- 型号: IS34MW02G084-BLI
- 厂商: Integrated Silicon Solution, Inc. (ISSI)
- 类别: 存储器
- 封装: VFBGA-63
- 描述: NAND Flash 2Gbit (x8,4 bit ECC), 63 BALL VFBGA, 1.8V, RoHS, IT
- 库存地点: 内地
- 库存: 44
- 货期: 1 - 3 个工作日
个
总额¥ 29.85823
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包装流程
1.产品检查
2.塑料封装
3.防静电保护
4.包装入箱
5.贴条形码
6.出库运输
产品属性 产品问答
- 属性参考值
- 工厂交货时间:8 Weeks
- 包装/外壳:VFBGA-63
- 安装类型:表面贴装
- 表面安装:YES
- 供应商器件包装:63-VFBGA (9x11)
- 终端数量:63
- RoHS:Details
- Mounting Styles:SMD/SMT
- Interface Type:Parallel
- Timing Type:Asynchronous
- Supply Voltage-Min:1.7 V
- Minimum Operating Temperature:- 40 C
- Maximum Operating Temperature:+ 85 C
- Active Read Current - Max:30 mA
- Moisture Sensitive:有
- Factory Pack QuantityFactory Pack Quantity:220
- Supplier Package:VFBGA
- Typical Operating Supply Voltage:1.8000 V
- Minimum Operating Supply Voltage:1.7 V
- ECC Support:有
- Block Organization:Symmetrical
- Number of Words:256 MWords
- Maximum Operating Supply Voltage:1.95 V
- Cell Type:SLC NAND
- Mounting:表面贴装
- Package:Bulk
- 厂商:ISSI, Integrated Silicon Solution Inc
- Product Status:活跃
- Memory Types:Non-Volatile
- Supply Voltage-Max:1.95 V
- Package Description:VFBGA-63
- Package Style:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
- Number of Words Code:256000000
- Package Body Material:PLASTIC/EPOXY
- Operating Temperature-Min:-40 °C
- Operating Temperature-Max:85 °C
- Rohs Code:有
- Manufacturer Part Number:IS34MW02G084-BLI
- Supply Voltage-Nom (Vsup):1.8 V
- Package Code:VFBGA
- Package Shape:RECTANGULAR
- Part Life Cycle Code:活跃
- Ihs Manufacturer:INTEGRATED SILICON SOLUTION INC
- Risk Rank:5.75
- Usage Level:Industrial grade
- 系列:IS34MW02G084
- 操作温度:-40 to 85 °C
- 类型:SLC NAND类型
- 技术:FLASH - NAND (SLC)
- 电压 - 供电 :1.7V ~ 1.95V
- 端子位置:BOTTOM
- 终端形式:BALL
- 功能数量:1
- 端子间距:0.8 mm
- Reach合规守则:compliant
- 引脚数量:63
- JESD-30代码:R-PBGA-B63
- 电源电压-最大值(Vsup):1.95 V
- 温度等级:INDUSTRIAL
- 电源电压-最小值(Vsup):1.7 V
- 内存大小:2 Gbit
- 操作模式:ASYNCHRONOUS
- 电源电流-最大值:30 mA
- 访问时间:30 ns
- 内存格式:FLASH
- 内存接口:Parallel
- 建筑学:Sectored
- 数据总线宽度:8 bit
- 组织结构:256 M x 8
- 座位高度-最大:1 mm
- 内存宽度:8
- 写入周期时间 - 字符、页面:45ns
- 地址总线宽度:8 Bit
- 密度:2 Gbit
- 记忆密度:2147483648 bit
- 筛选水平:Industrial
- 并行/串行:PARALLEL
- 内存IC类型:FLASH
- 编程电压:1.7, 1.95 V
- 引导模块:无
- 组织的记忆:256M x 8
- 宽度:9 mm
- 长度:11 mm
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